A Novel 3.63–V 6.73-ppm/°C CMOS Bandgap Reference

This paper presents a novel bandgap reference (BGR). Nine pairs of bipolar transistors are used to produce a voltage that is proportional to absolute temperature (PTAT), and three base-emitter voltages of bipolar transistors are used to produce a voltage that is complementary to absolute temperature (CTAT). The BGR of this structure can obtain a lower temper-ature coefficient with first-order temperature compensation. In the simulation, a voltage reference of 3.63 V with a temperature coefficient of 6.73 ppm/vC is achieved for a temperature range of - 45°C to 125°C at a 5 V supply voltage.

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Published
2024-08-23
DOI
https://doi.org/10.1109/isset62871.2024.10779654
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
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article
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article

A Novel 3.63–V 6.73-ppm/°C CMOS Bandgap Reference

Xingtao Dong, Qi Wei, Peipei Li, Jing Zhang
Advancements in Semiconductor Devices and Circuit Design
article

A Novel 3.63–V 6.73-ppm/°C CMOS Bandgap Reference

Xingtao Dong, Qi Wei, Peipei Li, Jing Zhang
article en

Abstract

This paper presents a novel bandgap reference (BGR). Nine pairs of bipolar transistors are used to produce a voltage that is proportional to absolute temperature (PTAT), and three base-emitter voltages of bipolar transistors are used to produce a voltage that is complementary to absolute temperature (CTAT). The BGR of this structure can obtain a lower temper-ature coefficient with first-order temperature compensation. In the simulation, a voltage reference of 3.63 V with a temperature coefficient of 6.73 ppm/vC is achieved for a temperature range of - 45°C to 125°C at a 5 V supply voltage.

North China University of Technology (CN), Beijing Jiaotong University (CN), Tsinghua University (CN)
Openalex Percentile: Top 80%
Advancements in Semiconductor Devices and Circuit Design
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A Novel 3.63–V 6.73-ppm/°C CMOS Bandgap Reference — Xingtao Dong, Qi Wei, et al. · (2024) | TGRS Research Map | TGRS