A TCAD Study of Analog Figures of Merit of Ultrathin Body and Buried Oxide SOI MOSFETs with Non-LDD Source/Drain Extensions

A recently proposed ultrathin body and buried oxide (UTBB) SOl MOSFETs with non-LDD source/drain extensions, which are induced by embedded fixed charges within the BOX, is investigated for analog circuit applications. TCAD simulation shows that the proposed device exhibits superior characteristics in suppressing short-channel effects while concurrently achieving higher transconductance <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(g_{\mathfrak{m}})$</tex>, lower output conductance <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(g_{\mathrm{d}\mathrm{s}})$</tex> and higher intrinsic gain <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(A_{\mathrm{v}})$</tex>, as well as reduced kink current. In the proposed device, onset of the kink current effect occurs at a larger <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$Vo\mathrm{s}$</tex> bias compared to the LDD device, besides, it has a weaker drain-induced barrier lowering effect. Both factors lead to a flat VDS region available in the output curve above the drain saturation voltage with lower <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$g_{\mathrm{d}\mathrm{s}}$</tex> obtained.