Experiment and Research on Reliability Optimization of NBTI Based on 0.11 $\mu\mathrm{m}$ ULL Technology

1.5V PMOS based on the 0.11 <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">${\mu\mathrm{m}}$</tex> ULL process technology face a reliability problem similar to the Negative Bias Temperature Instability (NBTI) of processes below 90nm due to their high opening voltage. Based on the device degradation mechanism of NBTI, the test method and judgment criteria of NBTI are calibrated, and three kinds of interface defect reduction experiments of gate-oxygen annealing, source-drain F ion implantation and ILD increase USG are designed and completed. The experimental results showed that the estimated reliable life of NBTI increased by 44.1 times to 14.9 years when all B was replaced by BF2 by adding fluorine into PMOS source, and the higher the fluorine content, the better, and three repeated validations were successfully completed.