Electrical Properties of Al<sub>2</sub>O<sub>3</sub>-Gate AlGaN/GaN MOSHEMTs: TMC and Size Effects
Based on the charge control model, the electrical properties are studied in the AlGaN/GaN MOSHEMTs with Al<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> gate, considering the fixed chargers and the polarization in the nitride heterostructures. It is found that the threshold voltages will shift to the negative direction when each layer's thickness and Al component increase. The drain current rises obviously with increasing barrier thickness and Al component, whereas an opposite effect presents when the thickness of Al<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> gate increases. Meanwhile, the variations of Al component and devices' size have a significant influence on electron density. These results indicate that the electrical properties can be improved if the suitable values of Al component and film size are adopted in the fabrication of MOSHEMT devices.
Authors
- Yan Xing (ORCID: https://orcid.org/0000-0003-2583-4813)
- Xiaojuan Zhou (ORCID: https://orcid.org/0000-0003-2612-7694)
Institutions
- Inner Mongolia University (CN)
Publication Details
- Published
- 2024-08-23
- DOI
- https://doi.org/10.1109/isset62871.2024.10779802
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Research Program of Science and Technology at Universities of Inner Mongolia Autonomous Region