Design and Compromise of RC-IGBT with High Voltage to Suppress Snapback

Compared with the fourth generation field stop trench insulated gate bipolar transistor, the reverse-conducting insulated gate bipolar transistor (RC-IGBT) has the advantages of low cost, small volume and high reliability, which is limited by the inherent rebound phenomenon in the semiconductor back surface process and conduction. In this paper, a high-voltage trench RC-IGBT is designed by process simulation, which is different from the mainstream low voltage in the market. The electrical characteristics are simulated and how to suppress the rebound phenomenon from the design of process parameters is studied. At the same time, the influence of process parameters on the dynamic and static performance of the device is analyzed, and finally a set of process parameter schemes with low loss, high reliability and compromise performance is given.