A Novel SPICE Modeling Approach for SiC D-MOSFET Based on BSIM3HV

SiC MOSFETs have emerged as a highly promising solution for power electronics applications due to their superior material properties, including a wide bandgap, high thermal conductivity, high critical electric field strength, and high saturation velocity of charge carriers. Accurate compact modeling of SiC D-MOSFETs is crucial when designing analog circuits for applications such as solar inverters, motor drives, high-voltage DC-DC converters, and uninterruptible power supplies (UPS). The current characteristics of SiC MOSFETs can be numerically assessed using TCAD simulation, which compares them against measurements from the device datasheet. In this paper, we present a comprehensive modeling approach for the SCT50N120 1200V SiC D-MOSFET from STMicroelectronics. The well-established industry-standard B<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$S$</tex>IM3HV SPICE model is employed, and its key parameters are optimized to achieve an accurate fit between the simulated and measured current characteristics. This optimization process yields an refined SPICE circuit simulation model for the targeted SiC D-MOSFET device, which is subsequently verified through simulations. Ultimately, we demonstrate reasonable agreement between the optimized SPICE model simulations and the measured datasheet results for the IDS- VGS and IDS-VDS characteristics across various bias conditions.