Research on Reliability Issues of Gallium Oxide Power Devices

This article focuses on the reliability of gallium oxide <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\text{Ga}_2\mathrm{O}_{3})$</tex> and its power devices, studying the reliability of gallium oxide power devices and mainly revolving around the solutions to the problems encountered in the process flow such as design and preparation of gallium oxide power devices. It introduces a variety of methods in detail to achieve the design of a new device structure and optimize the existing process, so as to meet the high requirements of material, equipment and operation in the device preparation process. The various methods introduced are used to solve the four most common problems in the performance optimization of gallium oxide power devices: p-type doping problems; electrical performance issues; normal device shutdown issues; thermal management issues. Through learning these methods, we can improve the existing processes.