Research on the Reliability of Gallium Oxide Power Devices

With the rapid development of modern semiconductor technology, silicon and germanium no longer meet people's needs, and more and more broadband forbidden semiconductors have been proposed. Among them, gallium oxide, as a new type of ultra wide bandgap semiconductor material, has outstanding advantages such as wider energy band, higher critical breakdown electric field, and lower production cost compared to third-generation semiconductors gallium nitride and silicon carbide. This has attracted great attention from the scientific and industrial communities in the field of ultra-high voltage withstand power electronic devices. However, due to the material and electronic structure of gallium oxide, there are a series of reliability issues in its power devices. Among them, due to the poor thermal conductivity of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\beta$</tex>-Ga2O3, gallium oxide MOSFET may be affected by self heating effects. Similar to other wide bandgap oxide semiconductors, achieving p-type doping of gallium oxide is difficult. Due to the material, gallium oxide MOSFET cannot reach their theoretical breakdown voltage. This article proposes three main issues that affect the reliability of gallium oxide MOSFET, and identifies methods that can be optimized at each stage to address these three issues.