The Impact of Neutron Energy on Laser Simulation Technology in Transient Synergistic Damage

The study explores the impact of neutrons with different energies on laser simulation of silicon bipolar junction transistors (Si BJTs) under transient synergistic damage. By simulating the energy deposition distribution and transient current response of low-energy and high-energy photons at different neutron energies (ranging from 1 e V to 2 MeV), the following results are revealed: For high-energy neutron surroundings (energy > 100 keV), low-energy photons can effectively simulate high-energy photons to cause transient synergistic damage effects with neutrons. In contrast, for low-energy neutron surroundings (energy < 100 keV), the energy deposition distributions of low-energy and high-energy photons interacting with neutrons differ significantly. In other words, laser simulation techniques are suitable for studying transient synergistic damage of Si BJTs in high-energy neutron surroundings but have limitations in low-energy neutron surroundings. Therefore, the influence of neutron energy should be considered when applying laser simulation techniques to study transient synergistic damage.