Investigation of SiC MOSFET Based on Implantation for Anti-Irradiation
This study investigates the anti-irradiation characteristics of SiC MOSFETs using multi-energy ion implantation. By simulating boron ion implantation in SiC with Sentaurus TCAD software and comparing the results with SIMS measurements, the reliability and stability of the devices were enhanced. The findings demonstrate that multi-energy implantation achieves uniform doping, improving anti-irradiation capabilities and reducing defect concentration, offering valuable insights for optimizing SiC MOSFET processes.
Authors
- Mingyang Zhang (ORCID: https://orcid.org/0009-0001-6334-7963)
- Hongze Zhang
- Pu Chen (ORCID: https://orcid.org/0000-0002-5114-5942)
- Huan Wang (ORCID: https://orcid.org/0000-0001-7231-7611)
- Zhiyuan Zhu
Institutions
- Southwest University (CN)
- Nanjing Institute of Technology (CN)
Publication Details
- Published
- 2024-08-23
- DOI
- https://doi.org/10.1109/isset62871.2024.10779609
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00