Anti-Aging Row Redundancy Technology of SRAM Based on New 12T Cell

In this paper, in order to alleviate the aging of SRAM caused by NBTI, an anti-aging row redundancy technology is proposed. Redundant rows are added to the original array to make each row take turns to rest to restore the threshold voltage. Based on the reaction-diffusion model, the relationship between the number of redundant rows and the service life of the array in the worst case is derived. Because the traditional 6T cell is an interlocking structure, the threshold voltages of two PMOS cannot be restored at the same time. A new 12T cell is designed, in which the threshold voltages of two PMOS can be restored at the same time during the rest period, and the storage values can be directly transferred between rows without reading and writing when switching working rows.