Improvement of Dynamic Characteristic of the Etched JTE for 10kV 4H-SiC FID

The maximum voltage for silicon carbide (SiC) Fast Ionization Dynistor (FID) is significantly exceeds than the static blocking voltage, rendering it challenging for conventional termination to ensure the FID's normal operation. Consequently, this paper investigates and optimizes the FID with Three-Step Space-Modulated Buffer Trench junction termination extension (3S-SMBT-JTE). This terminal structure exhibits superior capability for controlling the breakdown peak surface and bulk electric fields. Simulation results indicate that, with the utilization of 3S-SMBT-JTE, the maximum voltage observed is 14.96kV, and the peak electric field strength in the termination region is <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$1.66 \times 10^{6}\mathrm{V}/\text{cm}$</tex>, which is below the critical breakdown field strength. Compared to the traditional 3S-JTE, the 3S-2SMBT-JTE has reduced the peak electric field in the terminal region by 68.03%.