Enhanced red emission in perovskite light-emitting diodes via F-PEI additive

Mixed halogen perovskite materials show good application potential in the field of light-emitting diodes. However, due to non-radiative recombination of defect states in perovskite films, the external quantum efficiency (EQE) and stability of perovskite light-emitting diodes (PeLEDs) still lag behind traditional LEDs. Herein, we modulated the perovskite crystallization process by adding fluorinated polyethylenimine (F-PEI) into the perovskite precursor solution, resulting in perovskite films with smaller grain sizes, smoother surfaces, and lower defect density. These improvements significantly improve the photoluminescence efficiency of perovskite films and the performance of corresponding diode devices, with the peak EQE of PeLEDs reaching 20.89% at 668 nm. In addition, the F-PEI additive improves the thermal stability of the device and extends the operating life of the device. This shows the potential of this additive to improve the performance of perovskite light-emitting diodes.

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Publication Details

Journal
AIP Advances
Published
2024-12-01
DOI
https://doi.org/10.1063/5.0243719
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
0.00

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article

Enhanced red emission in perovskite light-emitting diodes via F-PEI additive

X. Guan, Yi Shao, Jihua Cao, Wen Yan
AIP Advances
Perovskite Materials and Applications
article

Enhanced red emission in perovskite light-emitting diodes via F-PEI additive

X. Guan, Yi Shao, Jihua Cao, Wen Yan
article en

Abstract

Mixed halogen perovskite materials show good application potential in the field of light-emitting diodes. However, due to non-radiative recombination of defect states in perovskite films, the external quantum efficiency (EQE) and stability of perovskite light-emitting diodes (PeLEDs) still lag behind traditional LEDs. Herein, we modulated the perovskite crystallization process by adding fluorinated polyethylenimine (F-PEI) into the perovskite precursor solution, resulting in perovskite films with smaller grain sizes, smoother surfaces, and lower defect density. These improvements significantly improve the photoluminescence efficiency of perovskite films and the performance of corresponding diode devices, with the peak EQE of PeLEDs reaching 20.89% at 668 nm. In addition, the F-PEI additive improves the thermal stability of the device and extends the operating life of the device. This shows the potential of this additive to improve the performance of perovskite light-emitting diodes.

AIP AdvancesVol. 14(12)
University of Science and Technology of China (CN)
Suzhou University
Affordable and clean energy
Openalex Percentile: Top 80%
Perovskite Materials and Applications
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