Exploring Gallium Nitride Bulk Crystal Growth

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SPIRE - Sciences Po Institutional REpository
Published
2024-09-16
Primary Topic
GaN-based semiconductor devices and materials
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article
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article

Exploring Gallium Nitride Bulk Crystal Growth

Robert Kucharski, Lutz Kirste, Marcin Zając, Tomasz Sochacki et al.
SPIRE - Sciences Po Institutional REpository
GaN-based semiconductor devices and materials
article

Exploring Gallium Nitride Bulk Crystal Growth

Robert Kucharski, Lutz Kirste, Marcin Zając, Tomasz Sochacki, Sandrine Juillaguet, Karolina Grabiańska, Kacper Sierakowski, Michał Boćkowski, Matthieu Paillet, J.L. Weyher, A. Jaroszynska
article en

Abstract

No abstract available for this paper.
SPIRE - Sciences Po Institutional REpository
Université de Montpellier (FR), Fraunhofer Institute for Applied Solid State Physics (DE), Institute of High Pressure Physics (PL), Laboratoire Charles Coulomb (FR)
Openalex Percentile: Top 86%
GaN-based semiconductor devices and materials
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Exploring Gallium Nitride Bulk Crystal Growth — Robert Kucharski, Lutz Kirste, et al. · SPIRE - Sciences Po Institutional REpository (2024) | TGRS Research Map | TGRS