Fraunhofer Institute for Applied Solid State Physics (DE)
Institute of High Pressure Physics (PL)
Laboratoire Charles Coulomb (FR)
Publication Details
Journal
SPIRE - Sciences Po Institutional REpository
Published
2024-09-16
Primary Topic
GaN-based semiconductor devices and materials
Type
article
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article
Exploring Gallium Nitride Bulk Crystal Growth
Robert Kucharski, Lutz Kirste, Marcin Zając, Tomasz Sochacki et al.
Journal
SPIRE - Sciences Po Institutional REpository
Topics
GaN-based semiconductor devices and materials
article
Exploring Gallium Nitride Bulk Crystal Growth
Robert Kucharski, Lutz Kirste, Marcin Zając, Tomasz Sochacki, Sandrine Juillaguet, Karolina Grabiańska, Kacper Sierakowski, Michał Boćkowski, Matthieu Paillet, J.L. Weyher, A. Jaroszynska
article en
Abstract
No abstract available for this paper.
Publication Tag
SPIRE - Sciences Po Institutional REpository
Institutions
Université de Montpellier (FR), Fraunhofer Institute for Applied Solid State Physics (DE), Institute of High Pressure Physics (PL), Laboratoire Charles Coulomb (FR)