Biomimetic Afferent Nervous Sensing Element Based on NiAl-LDHs Piezoelectric Synaptic Thin-Film Transistor

There is an urgent requirement for the incorporation of biomimetic afferent nervous sensing elements in the rapidly growing field of neuromorphic chips and artificial intelligent robots. It is imperative to ensure the reliable response of the biomimetic afferent nervous sensing element to actual signals such as heat or pressure, rather than relying on conventional electrical stimuli. In this study, we present NiAl-LDHs synaptic thin-film transistor by integrating the piezoelectric properties with temperature response. It is capable of effectively producing a response to pressure behaviors, while also simulating the finite element analysis. In addition, the proposed device is employed to simulate an intriguing phenomenon referred to as “operant conditioned response” through the implementation of a conventional “trial and error learning” method. The implementation of the transitions from short-term memory to long-term memory occurs during two stages of operant conditioning reflex (training and experiencing). In brief, the device effectively replicates sensory reactions in biological afferent nervous components. This showcases its exceptional capacity to generate pressure neuro-impulses upon exposure to actual stimuli, thereby facilitating the attainment of an objective-emulating human-like sensation.