Research on CMOS image sensor based on circuit model simulation

This paper presents a detailed study of the design, simulation, and analysis of a CMOS image sensor, focusing on a 3T active pixel sensor (APS) readout circuit and a 3x3 pixel array. Utilizing SPICE simulations, this paper meticulously investigates the sensor's response to varying light intensities and assesses its performance in capturing high-resolution, low-noise images. The research introduces a novel approach for image reconstruction from voltage signals, employing Excel-based simulation to visualize the sensor's output and evaluate its effectiveness. Our findings demonstrate the 3T APS architecture's potential to deliver superior image quality, highlighting its suitability for diverse imaging applications. The analysis of the 3T active pixel circuit simulation results reveal critical insights into the circuit's phototransduction efficacy and temporal response characteristics. The simulation output of the 3x3 pixel array circuit further delineates the performance of the APS with precision, indicating a high charge transfer efficiency and effective reset mechanism. The Excel visualization provides a binary image with stark contrast, reinforcing the sensor's potential in applications requiring binary decision-making. This study contributes significantly to the field of CMOS image sensor technology, offering a scientific and practical perspective on the development of next-generation sensors for applications in consumer electronics, automotive, and medical imaging. The research provides valuable insights into the sensor's operational dynamics and performance characteristics, paving the way for future advancements in sensor technology.