Characterization of individual charge fluctuators in Si/SiGe quantum dots
Quantum computers are susceptible to noise. In silicon quantum computers, random electrical fluctuations in the semiconductor can disturb qubits based on individual electrons. However, little is known about the causes of these electrical fluctuations. Here, the authors zoom in and study individual charge fluctuators in silicon quantum dots and observe a variety of new phenomena. The results promise to help understand and mitigate charge noise in silicon quantum computers.
Authors
- John M. Nichol (ORCID: https://orcid.org/0000-0003-2864-2243)
- N. Tobias Jacobson
- Dylan Albrecht
- Rohith Vudatha
- Feiyang Ye (ORCID: https://orcid.org/0000-0003-4275-2975)
- Ammar Ellaboudy (ORCID: https://orcid.org/0000-0001-7689-4336)
Institutions
- Sandia National Laboratories (US)
- University of Rochester (US)
Publication Details
- Journal
- Physical review. B./Physical review. B
- Published
- 2024-12-11
- DOI
- https://doi.org/10.1103/physrevb.110.235305
- Citations
- 13
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 2.71
Funders
- U.S. Department of Energy
- Air Force Office of Scientific Research
- Army Research Office