Thermoelastic polarization and other effects in polar semiconductors

Electrical polarization and associated effects are now gaining importance for electronics due to growing application of wide-bandgap polar semiconductors such as gallium arsenide and gallium nitride. The internal polarity of the structure of such semiconductors has significant impact on millimeter wave losses as well as on the technological features and application of electronic devices based on polar semiconductors. It has been shown that any piezoelectric has an intra-crystalline polar moment, even if the piezoelectric crystal does not belong to the pyroelectric symmetry. A new effect of thermoelastic polarization in polar-neutral crystals is described and a number of possibilities for its implementation are discussed. The experimental study of the internal polarity in piezoelectrics is provided by the partial limitation of thermal strain method. It is believed that thermoelastic polarization must be taken into account in the technology of polar semiconductors as enabling creation of integrated sensors based on them.