X-ray diffraction and Raman spectroscopy studies of Ga-Ge-Te alloys

The structure and vibrational properties of glassy Ge19Te81 and Ga7.9Ge11.5Te80.6 alloys were studied using X-ray diffraction and Raman spectroscopy. The amorphous nature of the obtained alloys was confirmed by the experimental X-ray diffraction patterns. The latter were used for calculating radial distribution functions. Such calculations gave the positions of the nearest-neighbour peak r1 – 2.65 Å and second nearest-neighbour peak r2 – 4.31 and 4.44 Å. The obtained r1 values are in good agreement with the known from literature Ge-Te and Ga-Te bond lengths. Similar r1 values were also observed for Ga-Ge-Te glasses of different compositions. The r2/r1 values of 1.63 and 1.68 are close to the typical value for a regular tetrahedron structure. The observed bands in the Raman spectra of the studied Ga-Ge-Te samples show that such glasses contain different nanophases. The Raman spectra may be interpreted in terms of vibrational modes of Ga-Te and Ge-Te binary glasses and films.

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Publication Details

Journal
Semiconductor Physics Quantum Electronics & Optoelectronics
Published
2024-12-06
DOI
https://doi.org/10.15407/spqeo27.04.404
Citations
3
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
0.63
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article

X-ray diffraction and Raman spectroscopy studies of Ga-Ge-Te alloys

K.V. Shportko, Andriy Lotnyk, A.V. Stronski, M.V. Popovych et al.
3 citations
Semiconductor Physics Quantum Electronics & Optoelectronics
Chalcogenide Semiconductor Thin Films
0.63
article

X-ray diffraction and Raman spectroscopy studies of Ga-Ge-Te alloys

K.V. Shportko, Andriy Lotnyk, A.V. Stronski, M.V. Popovych, H.K. Kochubei
article en
3 citations

Abstract

The structure and vibrational properties of glassy Ge19Te81 and Ga7.9Ge11.5Te80.6 alloys were studied using X-ray diffraction and Raman spectroscopy. The amorphous nature of the obtained alloys was confirmed by the experimental X-ray diffraction patterns. The latter were used for calculating radial distribution functions. Such calculations gave the positions of the nearest-neighbour peak r1 – 2.65 Å and second nearest-neighbour peak r2 – 4.31 and 4.44 Å. The obtained r1 values are in good agreement with the known from literature Ge-Te and Ga-Te bond lengths. Similar r1 values were also observed for Ga-Ge-Te glasses of different compositions. The r2/r1 values of 1.63 and 1.68 are close to the typical value for a regular tetrahedron structure. The observed bands in the Raman spectra of the studied Ga-Ge-Te samples show that such glasses contain different nanophases. The Raman spectra may be interpreted in terms of vibrational modes of Ga-Te and Ge-Te binary glasses and films.

Semiconductor Physics Quantum Electronics & OptoelectronicsVol. 27(04)
Openalex Percentile: Top 30%
Chalcogenide Semiconductor Thin Films
0.63
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