The Effect of Temperature on the Carrier Transport Performance of p-CuO/n-WO<sub>3</sub> Self-Powered Photodetectors

A UV–visible light self-powered photodetector based on p-CuO/n-WO3 heterojunction structure was prepared by hydrothermal and spin-coating methods. The photoelectrical properties of the detector at room temperature and its electrical properties in the temperature range from room temperature to 200 °C were studied. In particular, it shows extremely sensitive response between 400 and 700 nm, with a sensitivity of 449.5 at room temperature, a rise time of 32.6 ms, a fall time of 31.8 ms, and a maximum responsivity of 4.589 μA/W. Theoretical simulation reveals detailed information about the behavior of electrons and holes, emphasizing the distribution of the electric field in the steady state of the device. Theoretical simulations indicate that the WO3 layer, where the electric field is maximized, serves as the pressure-bearing layer, with breakdown primarily occurring in this region. These findings provide a straightforward manufacturing method for self-powered devices.

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Publication Details

Journal
ACS Applied Electronic Materials
Published
2024-12-11
DOI
https://doi.org/10.1021/acsaelm.4c01787
Citations
3
Primary Topic
Transition Metal Oxide Nanomaterials
Type
article
Field-Weighted Citation Impact
0.51

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The Effect of Temperature on the Carrier Transport Performance of p-CuO/n-WO3 Self-Powered Photodetectors

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3 citations
ACS Applied Electronic Materials
Transition Metal Oxide Nanomaterials
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article

The Effect of Temperature on the Carrier Transport Performance of p-CuO/n-WO3 Self-Powered Photodetectors

Chaoqian Han, Liying Wang, Yang Gao, Xijia Yang, Xuesong Li, Xiaohan Zhang, Wei Lü
article en
3 citations

Abstract

A UV–visible light self-powered photodetector based on p-CuO/n-WO3 heterojunction structure was prepared by hydrothermal and spin-coating methods. The photoelectrical properties of the detector at room temperature and its electrical properties in the temperature range from room temperature to 200 °C were studied. In particular, it shows extremely sensitive response between 400 and 700 nm, with a sensitivity of 449.5 at room temperature, a rise time of 32.6 ms, a fall time of 31.8 ms, and a maximum responsivity of 4.589 μA/W. Theoretical simulation reveals detailed information about the behavior of electrons and holes, emphasizing the distribution of the electric field in the steady state of the device. Theoretical simulations indicate that the WO3 layer, where the electric field is maximized, serves as the pressure-bearing layer, with breakdown primarily occurring in this region. These findings provide a straightforward manufacturing method for self-powered devices.

ACS Applied Electronic MaterialsVol. 6(12)
Chinese Academy of Sciences (CN), Changchun Institute of Optics, Fine Mechanics and Physics (CN), Changchun University of Technology (CN)
Department of Science and Technology of Jilin Province
Affordable and clean energy
Openalex Percentile: Top 41%
Transition Metal Oxide Nanomaterials
0.51
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