A Simple Memristor Model for Memory Crossbars

Memristors are favorable circuit components with very good commutating and memory properties. They are with small power usage, nano-sizes, and good compatibility to CMOS high-density integrated circuits. Memristors are relevant for creating neural nets, memory arrays, and various electric schemes. The design, analysis and simulations of memristor elements and electronic schemes, based on memristors by software simulators are significant tasks. This paper offers analysis of memristor arrays in GNU Octave and LTSPICE by some numerical methods. The considered modified memristor model is an appropriate one, because it is with a high-rate operation, very good switching features and includes activation threshold, which permits reading and writing processes. A comparison with several other regularly used standard and modified memristor models and analysis of their behavior are conducted. Analyses are made in LTSPICE and Octave, and comparison of obtained results approves model’s accurate operation. The suggested work could be suitable for both educational and scientific utilizations.