Design Optimization of the IGBT’s Raising N-Buffer Layer

This paper presents a comparative analysis focusing on the design of the Raised N-buffer layer of IGBT (RN-IGBT), as opposed to the traditional FS-IGBT, with validation conducted utilizing the Silvaco Technology Computer-Aided Design (TCAD) platform. The RN-IGBT structure features a quasi-neutral N-drift region insert into Negative-type buffer layer and Positive-type collector region. Additionally, the raised N -buffer layer in the drift region results in $\mathbf{4. 7 \%}$ improvement of critical breakdown voltage for the same on-state losses or, up to $22 \%$ turn-off losses reduction, while preserving the same level of on-state voltage decrement, as compared to a standard FS-IGBT configuration. The utilization of RN-IGBT extends to RC-IGBT implementations, enabling the mitigation of snapback phenomena.