Short-term Recovery of Silicon Carbide Power MOSFET Threshold Voltage

With the growing application of silicon carbide (SiC) MOSFETs, the instability issues of the threshold voltage have attracted significant attention. However, there is limited research on the recovery performance of the threshold voltage of SiC MOSFETs. In this paper, the SiC MOSFET short-term threshold voltage recovery was experimentally studied. It is found that the short-term recovery properties of threshold voltage are affected not only by the gate bias but also by the bias time. The research results not only provide a reference for threshold voltage measurement but also improve the understanding of threshold voltage instability.