Bipolar Random Signal Generation With Electrical Operation Based on Two Magnetic Tunnel Junctions
The generation of high quality bipolar random signal for unconventional computing and artificial neural networks remains challenging. In this study, we proposed a new method to generate bipolar random signals using two industrial-viable magnetic tunnel junctions (MTJs) operated solely by electrical operations compatible to the conventional memory program/read circuits. The bipolar random signals demonstrate excellent randomness and this method shows satisfying controllability over the average dwell times (ADTs), with good adjustability in bit generation speed and power consumption. This study provides a new practical hardware solution to the generation of high-quality random signals in the post-Moore era.
Authors
- Zheng Chai (ORCID: https://orcid.org/0000-0003-3446-7138)
- J. F. Zhang (ORCID: https://orcid.org/0000-0003-4987-6428)
- Xue Zhou (ORCID: https://orcid.org/0000-0002-2218-0618)
- Xihui Yuan
- Xin Yue (ORCID: https://orcid.org/0000-0002-7625-2701)
- Weidong Zhang (ORCID: https://orcid.org/0000-0003-4600-7382)
- Tai Min (ORCID: https://orcid.org/0000-0003-4682-4091)
- Yongjie Luo (ORCID: https://orcid.org/0000-0002-2463-2577)
- Jiajia Jian
- Yingtong He
Institutions
- Liverpool John Moores University (GB)
- Xi'an Jiaotong University (CN)
Publication Details
- Journal
- IEEE Electron Device Letters
- Published
- 2024-12-11
- DOI
- https://doi.org/10.1109/led.2024.3515147
- Citations
- 2
- Primary Topic
- Blind Source Separation Techniques
- Type
- article
- Field-Weighted Citation Impact
- 0.70
Funders
- National Natural Science Foundation of China
- Engineering and Physical Sciences Research Council
- National Key Research and Development Program of China