A 78.2-dB Dynamic Range Shunt-Based Current Sensor for BLDC Motor Control With 2.75- <i>μ</i> s Conversion Time and 0.4-mm² Active Area
This article presents a shunt-based current sensor (CS) designed for brushless dc (BLDC) motor control. The proposed sensing system digitizes the current flowing through an external 12-m<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Omega $ </tex-math></inline-formula> resistor by sampling the resulting voltage drop by means of an accumulation-based sample-and-hold (S/H) circuit followed by a SAR-assisted <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Sigma \Delta $ </tex-math></inline-formula> incremental analog-to-digital converter (ADC). The employment of an accumulation technique within the S/H circuit allows to amplify the input signal while effectively mitigating the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$kT/C$ </tex-math></inline-formula> noise contribution, leading to a significant improvement to the dynamic range (DR) of the readout. The proposed ADC architecture, on the other hand, allows achieving the target resolution in a relatively fast conversion time, essential feature needed to meet the stringent latency requirement imposed by the considered application. The sensor was fabricated in a standard 130-nm CMOS process, occupies a silicon area of 0.4 mm2, and draws 6.7 mA from a 1.5-V supply. Over a ±4-A input current range and a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$- 20~^{\circ }$ </tex-math></inline-formula>C to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$100~^{\circ }$ </tex-math></inline-formula>C temperature range, it achieves a worst case gain error of ±0.8%. Moreover, the sensor features a DR of 78.2 dB and a 2.75-<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>s conversion time, resulting in a state-of-the-art 0.21-fW/Hz figure of merit (FoM).
Authors
- Edoardo Bonizzoni (ORCID: https://orcid.org/0000-0002-8398-8506)
- Andreas Fugger
- P. Malcovati (ORCID: https://orcid.org/0000-0001-6514-9672)
- Antonio Aprile (ORCID: https://orcid.org/0000-0003-3918-9296)
- Francesco Conzatti (ORCID: https://orcid.org/0000-0001-7880-2845)
- Jaya Satyanarayana Yarragunta
Institutions
- University of Pavia (IT)
- Infineon Technologies (Austria) (AT)
Publication Details
- Journal
- IEEE Journal of Solid-State Circuits
- Published
- 2024-12-11
- DOI
- https://doi.org/10.1109/jssc.2024.3510926
- Primary Topic
- Sensor Technology and Measurement Systems
- Type
- article
- Field-Weighted Citation Impact
- 0.00