Coherence effects in LIPSS formation on silicon wafers upon picosecond laser pulse irradiations

Abstract Using different laser irradiation patterns to modify the silicon surface, it has been demonstrated that, at rather small overlapping between irradiation spots, highly regular laser-induced periodic surface structures (LIPSS) can be produced already starting from the second laser pulse, provided that polarization direction coincides with the scanning direction. If the laser irradiation spot is shifted from the previous one perpendicular to light polarization, LIPSS are not formed even after many pulses. This coherence effect is explained by a three-wave interference, involving surface electromagnetic waves (SEWs) generated within the irradiated spot, SEWs scattered from the crater edge formed by the previous laser pulse, and the incoming laser pulse, that provides conditions for amplification of the periodic light-absorption pattern. To study possible consequences of SEW scattering from the laser-modified regions, where the refractive index can change due to material melting, amorphization, and the residual stress formed by previous laser pulses, hydrodynamic modelling and simulations have been performed within the melting regime. The simulations show that stress and vertical displacement could be amplified upon laser scanning. Both mechanisms, three-wave interference and stress accumulation, could enable an additional degree of controlling surface structuring.

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Publication Details

Journal
Journal of Physics D Applied Physics
Published
2024-12-11
DOI
https://doi.org/10.1088/1361-6463/ad9d51
Citations
6
Primary Topic
Laser Material Processing Techniques
Type
article
Field-Weighted Citation Impact
2.25
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article

Coherence effects in LIPSS formation on silicon wafers upon picosecond laser pulse irradiations

Inam Mirza, Paulius Gečys, Yoann Lévy, Alexander V. Bulgakov et al.
6 citations
Journal of Physics D Applied Physics
Laser Material Processing Techniques
2.25
article

Coherence effects in LIPSS formation on silicon wafers upon picosecond laser pulse irradiations

Inam Mirza, Paulius Gečys, Yoann Lévy, Alexander V. Bulgakov, Nadezhda M. Bulgakova, Gediminas Račiukaitis, Helen Α. Papadaki, Juraj Sládek, Evaggelos Kaselouris, Vasilis Dimitriou
article en
6 citations

Abstract

Abstract Using different laser irradiation patterns to modify the silicon surface, it has been demonstrated that, at rather small overlapping between irradiation spots, highly regular laser-induced periodic surface structures (LIPSS) can be produced already starting from the second laser pulse, provided that polarization direction coincides with the scanning direction. If the laser irradiation spot is shifted from the previous one perpendicular to light polarization, LIPSS are not formed even after many pulses. This coherence effect is explained by a three-wave interference, involving surface electromagnetic waves (SEWs) generated within the irradiated spot, SEWs scattered from the crater edge formed by the previous laser pulse, and the incoming laser pulse, that provides conditions for amplification of the periodic light-absorption pattern. To study possible consequences of SEW scattering from the laser-modified regions, where the refractive index can change due to material melting, amorphization, and the residual stress formed by previous laser pulses, hydrodynamic modelling and simulations have been performed within the melting regime. The simulations show that stress and vertical displacement could be amplified upon laser scanning. Both mechanisms, three-wave interference and stress accumulation, could enable an additional degree of controlling surface structuring.

Journal of Physics D Applied PhysicsVol. 58(8)
Mediterranean University (ME), Hellenic Mediterranean University (GR), Center for Physical Sciences and Technology (LT), FORTH Institute of Mediterranean Studies (GR), FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic (CZ)
Openalex Percentile: Top 12%
Laser Material Processing Techniques
2.25
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