An Online Junction Temperature Monitoring Method for Press-pack IGBT Based on a Novel TSEP With a Good Linearity
Online junction temperature (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T<sub>j</sub></i>) monitoring of press-pack insulated gate bipolar transistor (PP IGBT) is of great significance for improving reliability in high voltage and high power applications. Due to the complexity of press-pack packaging, the conventional <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T<sub>j</sub></i> monitoring method is difficult to online monitor <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T<sub>j</sub></i> of PP IGBT. In this article, the virtual threshold voltage (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V<sub>v</sub></i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">,th</sub>) is proposed as a novel temperature sensitive electrical parameter. A simple <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V<sub>v</sub></i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">,th</sub> monitoring circuit which does not affect the normal operation of converter is proposed. Within one switching cycle of PP IGBT, <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T<sub>j</sub></i> is online monitored accurately. The feasibility of proposed online <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T<sub>j</sub></i> monitoring method is verified based on a half-bridge inverter. A thermocouple is sealed into an emitter molybdenum to obtain IGBT chip temperature. A good linear relationship between <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V<sub>v</sub></i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">,th</sub> and <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T<sub>j</sub></i> is analyzed. Pearson correlation coefficients of fitting results at 0.31 kN and 4.30 kN are −0.99871 and −0.99970, respectively. The accuracy of proposed method is validated by comparing the temperature measured by thermocouple with the temperature calculated based on <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V<sub>v</sub></i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">,th</sub>. The error between the measured temperature and the calculated temperature is within 2.5 °C. The online experimental results demonstrate that the proposed method can accurately monitor <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T<sub>j</sub></i> of PP IGBT.
Authors
- Ziyang Zhang (ORCID: https://orcid.org/0009-0009-5593-5034)
- Liangcheng Tu (ORCID: https://orcid.org/0000-0003-1014-9784)
- Lin Liang (ORCID: https://orcid.org/0000-0002-0006-1183)
- Zhiyuan Zhang (ORCID: https://orcid.org/0000-0002-9212-8516)
Institutions
- Huazhong University of Science and Technology (CN)
Publication Details
- Journal
- IEEE Transactions on Power Electronics
- Published
- 2024-12-11
- DOI
- https://doi.org/10.1109/tpel.2024.3514709
- Citations
- 5
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 1.04