2 kV Al<sub>0.64</sub>Ga<sub>0.36</sub>N-channel high electron mobility transistors with passivation and field plates
Abstract High voltage (∼2 kV) Al 0.64 Ga 0.36 N-channel high electron mobility transistors were fabricated with an on-resistance of ∼75 Ω. mm (∼21 mΩ. cm 2 ). Two field plates of variable dimensions were utilized to optimize the breakdown voltage. The breakdown voltage reached >3 kV (tool limit) before passivation however it reduced to ∼2 kV after Si 3 N 4 surface passivation and field plate deposition. The breakdown voltage and on-resistance demonstrated a strong linear correlation in a scattered plot of ∼50 measured transistors. The fabricated transistors were electrically characterized and benchmarked against the state-of-the-art high-voltage (> 1 kV) Al-rich (>40%) AlGaN-channel transistors in breakdown voltage and on-resistance, indicating significant progress.
Authors
- Shubhra S. Pasayat
- Abdullah Al Mamun Mazumder (ORCID: https://orcid.org/0000-0003-4964-4133)
- Md Tahmidul Alam (ORCID: https://orcid.org/0009-0008-6556-839X)
- Chirag Gupta (ORCID: https://orcid.org/0000-0003-4143-9231)
- Kenneth Stephenson (ORCID: https://orcid.org/0000-0003-0081-2941)
- Abdullah Mamun (ORCID: https://orcid.org/0000-0002-6210-7829)
- Jiahao Chen (ORCID: https://orcid.org/0009-0004-6993-1417)
- Asif Khan (ORCID: https://orcid.org/0000-0001-9719-9340)
Publication Details
- Journal
- Applied Physics Express
- Published
- 2024-12-11
- DOI
- https://doi.org/10.35848/1882-0786/ad9db4
- Citations
- 8
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 2.49
Funders
- Advanced Research Projects Agency - Energy
- Air Force Office of Scientific Research