Precise control method of resistance of memristor

In this paper, a new method of adjusting the resistance value of the memristor is proposed by studying the existing resistance control methods and improving the variable gate voltage control method. The experimental results show that the method can realize the resistance control quickly, and the precision range of the resistance value is about 5%, which can meet the requirements of using the memristor array to complete the neuromorphic calculation. Based on the variable gate voltage control method, the precision control method of the memristor resistance value designed in this paper can realize the precise control of the resistance value by changing the amplitude and width of the pulse voltage applied to the source on a certain basis, and can achieve the effect of rapid convergence. Through experiments, the research results can be applied to the accurate regulation of the resistance value of the memristor, which can solve the problem of slow convergence speed of the current memristor regulation method to a certain extent, and can better achieve the regulation of the resistance value of the 1T1R array through further optimization, so as to better serve the neuromorphic calculation and help the development of artificial intelligence.