A Transistor-Based Dual-Band Rectifier With Harmonic-Controlled Dual Transmission Line

This letter proposes a high-efficiency dual-band rectifier based on transistors, introducing a novel output-matching network that integrates harmonic control into the dual-band fundamental impedance-matching design. This approach ensures that the input impedance aligns with the dual-band fundamentals while also effectively expanding the bandwidth of the dual-band rectifier. Additionally, the dual transmission lines modulate the harmonic components of both frequencies into a purely reactive impedance, while the T-section optimizes the imaginary part of the harmonic input impedance for both frequencies. To validate the effectiveness of this method, a high-efficiency dual-band rectifier operating at 0.9 and 2.45 GHz is designed and fabricated using CGH40010F GaN HEMT. Measurement results show that at an input power of 40 dBm and a dc load of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$60~\Omega $ </tex-math></inline-formula>, the rectifier achieves efficiencies of 82% at 0.9 GHz and 78% at 2.45 GHz, which maintains a bandwidth of 100 MHz. The circuit size is <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$6.6\times 4.6$ </tex-math></inline-formula> cm.