New electrode structure vertical cavity surface emitting semiconductor laser and its array

Abstract A new electrode structure is designed to enhance the uniformity of current distribution in vertical-cavity semiconductor lasers, thereby reducing device heat generation and improving both efficiency and output laser beam quality. Simulation software was employed to analyze the internal current distribution of both new electrode structure VCSEL and the traditional structure VCSEL. Subsequently, the new electrode structure VCSEL was successfully fabricated, and its output characteristics of the single VCSEL device were evaluated at room temperature. The laser wavelength measured 847nm, exhibiting a relatively uniform far-field distribution with a circular spot profile. The internal temperature distribution of a 1×3 array device is simulated.