Development of a synchrotron-based EUV microscope for actinic mask inspection

We have been developing an EUV microscope for actinic mask inspection based on a bending magnet beamline in Shanghai Synchrotron Radiation Facility (SSRF), China. The new microscope has a Fourier synthesis illuminator via scanning a Fresnel Zone Plate (FZP), and an off-axis FZP for imaging, which provides a theoretical spatial resolution of 33nm. In this work, we will present the optical and mechanical design of the microscope. We have validated the design and performance of the microscope by using a visible laser. We expect to have the microscope installed in SSRF and obtain preliminary results using 13.5nm EUV by the end of this year.

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Publication Details

Published
2024-12-10
DOI
https://doi.org/10.1117/12.3053151
Citations
2
Primary Topic
Advancements in Photolithography Techniques
Type
article
Field-Weighted Citation Impact
0.42
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Development of a synchrotron-based EUV microscope for actinic mask inspection

Kunyang Li, Zhenjiang Xing, Zhou Zhou, Jinjiang Fu et al.
2 citations
Advancements in Photolithography Techniques
0.42
article

Development of a synchrotron-based EUV microscope for actinic mask inspection

Kunyang Li, Zhenjiang Xing, Zhou Zhou, Jinjiang Fu, Shuying Deng
article en
2 citations

Abstract

We have been developing an EUV microscope for actinic mask inspection based on a bending magnet beamline in Shanghai Synchrotron Radiation Facility (SSRF), China. The new microscope has a Fourier synthesis illuminator via scanning a Fresnel Zone Plate (FZP), and an off-axis FZP for imaging, which provides a theoretical spatial resolution of 33nm. In this work, we will present the optical and mechanical design of the microscope. We have validated the design and performance of the microscope by using a visible laser. We expect to have the microscope installed in SSRF and obtain preliminary results using 13.5nm EUV by the end of this year.

Sun Yat-sen University (CN), Institute of Advanced Light Source Facilities Shenzhen (CN)
Openalex Percentile: Top 36%
Advancements in Photolithography Techniques
0.42
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