Study on interaction between bottom SiARC and photoresist

In general, the NTD and PTD processes use a mix of anti-reflective and photoresist materials, which were influenced by two identified factors: Acid-base balance and surface tension matching. This paper focus on positive development process which involves washing away overexposed areas and leaving on unexposed areas. Therefore, to reflect good hydrophobicity and demonstrate superior adhesion in non-exposed regions, the anti-reflective substance must be linked to the photoresist. Acid-base unbalance can lead to a significant reduction in exposure and increase the chance of failure. If the acidity of the Anti-reflective material is excessive, it will make the bottom of the photoresist form undercut profile due to too much photo acid, which will lead to dense graphic collapse. In order to prevent the undercut profile effect, we determine the reason by using the failure mechanism, which uses alkaline substances to suitably neutralize the quantity of photo acid at the bottom. This eliminates the influence of the photo acid reaction at the bottom that contributes to the formation of a normal graph.