Wiener-Padé model for lithographic resist modeling

Optical proximity correction (OPC) is an essential technique for enhancing photolithographic image quality. Its effectiveness and efficiency largely depend on accurate resist modeling. The resist exposure and development processes involve complex nonlinear physicochemical reactions, presenting significant challenges for fast and precise modeling required for OPC. In our work, a Wiener-Padé resist model is proposed. Through various experiments, we validate that the Wiener-Padé model delivers excellent performance in terms of accuracy, generality, and speed. The proposed resist modeling method offers significant potential for advancing photolithography modeling and OPC in contemporary semiconductor manufacturing.