INVESTIGATION OF ELECTRICAL PROPERTIES OF Al/PAN/p-Si MPS DEVICES FABRICATED BY SPIN COATING AND SCREEN-PRINTING TECHNIQUES

In this work, the polyacrylonitrile polymer was coated on top of p-Si by two different techniques, and the electrical characterization of the fabricated devices was held. Screen-printing and spin coating techniques were used to fabricate the metal/polymer/semiconductor devices, and the devices were finished with Ohmic contact of aluminum on the Si side, and with silver on the polymer side by using evaporation via chemical vapor deposition. The dark current - voltage and frequency dependent capacitance - voltage measurements of the fabricated Metal Polymer Semiconductor structure have been performed. Current and voltage measurements were carried out in the dark and in the voltage range of -2.0 V to +2.0 V. Capacitance voltage measurements were carried out in the dark, in the voltage range of -4.0 V to +4.0 V, and in the frequency range of 20 kHz to 1 MHz. The results of electrical characterization have been discussed in view of rectification of devices, interface states, interface dipoles, conduction of carriers, polarization mechanism, and relaxation process.