Characterizing ultrashort pulses with photon energies above 1.12 eV based on transient absorption in silicon thin films

Abstract Frequency-resolved optical switching (FROSt) is a phase-matching-free characterization technique for ultrashort pulses based on transient absorption in semiconductors. So far, this technique has been limited to characterizing pulses with photon energies smaller than the bandgap of the semiconductors used. In this work, we extend the method to characterize pulses of photon energy greater than the bandgap of the semiconductor used for characterization. We demonstrate this by characterizing ultrashort visible pulses and supercontinuum using silicon (Si) thin films deposited on a sapphire substrate. We also demonstrate that visible light sources up to a repetition rate of 250 kHz can be characterized using these samples. Therefore, this study highlights the potential of FROSt as a suitable technique for the temporal characterization of weak visible to infrared pulses, including high harmonics generated in solids.

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Publication Details

Journal
Journal of Physics Photonics
Published
2024-12-10
DOI
https://doi.org/10.1088/2515-7647/ad9cdb
Primary Topic
Laser-Matter Interactions and Applications
Type
article
Field-Weighted Citation Impact
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Characterizing ultrashort pulses with photon energies above 1.12 eV based on transient absorption in silicon thin films

Giulio Vampa, Mayank Kumar, Adrien Leblanc, Heide Ibrahim et al.
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Journal of Physics Photonics
Laser-Matter Interactions and Applications
article

Characterizing ultrashort pulses with photon energies above 1.12 eV based on transient absorption in silicon thin films

Giulio Vampa, Mayank Kumar, Adrien Leblanc, Heide Ibrahim, François Légaré, Elissa Haddad, Philippe Lassonde, Gaëtan Jargot, Kosta Oubrerie, Sohail A. Jalil, Saadat Mokhtari, Tristan Guay
article en

Abstract

Abstract Frequency-resolved optical switching (FROSt) is a phase-matching-free characterization technique for ultrashort pulses based on transient absorption in semiconductors. So far, this technique has been limited to characterizing pulses with photon energies smaller than the bandgap of the semiconductors used. In this work, we extend the method to characterize pulses of photon energy greater than the bandgap of the semiconductor used for characterization. We demonstrate this by characterizing ultrashort visible pulses and supercontinuum using silicon (Si) thin films deposited on a sapphire substrate. We also demonstrate that visible light sources up to a repetition rate of 250 kHz can be characterized using these samples. Therefore, this study highlights the potential of FROSt as a suitable technique for the temporal characterization of weak visible to infrared pulses, including high harmonics generated in solids.

Journal of Physics PhotonicsVol. 7(1)
Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), Université Paris-Saclay (FR), Institut National de la Recherche Scientifique (CA), CEA Paris-Saclay (FR), Laboratoire d'Optique Appliquée (FR), Laboratoire Interactions, Dynamiques et Lasers (FR), Joint Attosecond Science Laboratory (CA)
Canada Foundation for Innovation, Natural Sciences and Engineering Research Council of Canada, Fonds de recherche du Québec – Nature et technologies
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Laser-Matter Interactions and Applications
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