Novel structure of Fin-iTFET with main gate and source metal formed simultaneously while control gate and drain formed simultaneously

Abstract In this paper, we propose a new structure for Fin-iTFET where the main gate and source metal are formed simultaneously, and the control gate and drain are formed simultaneously. The process used for the fabrication is simple, cost-effective, and fully compact with conventional CMOS technology. With the help of a control gate, our Fin-iTFET can achieve a steep subthreshold swing ( SS avg) and a high I ON / I OFF ratio. Using Sentaurus TCAD simulations, we confirm that the current transport mechanism of our Fin-iTFET is based on band-to-band line-tunneling, which enhances the ON current ( I ON ) and mitigates leakage with a reduced trap-assisted tunneling (TAT) effect. Instead of relying on dopant implantations and thermal annealing, we utilize a metal-semiconductor Schottky junction to enhance the minority carrier concentration at the source end, increase band bending, increase the overlap between the conduction band and valence band, increase the vertical electric field, and thereby increase the line tunneling generation rates, ultimately enhancing the ON current of the device. The simulations show that the device exhibits an SSavg of 13.6 mV dec −1 with an I ON / I OFF ratio of 10 9 at V D = −0.2 V and V CG = 0.2 V. In summary, our Fin-iTFET can achieve excellent electrical performance at low power supply voltages.