A Quantum Controller IC With DRAG Generation in 40-nm Cryo-CMOS for Scalable Superconducting Quantum Computing

This article presents a cryo-CMOS controller that supports derivative removal by adiabatic gate (DRAG) pulses without requiring internal memory. The proposed scheme uses trigonometric relations that substitute a product of two sinusoids by a sum of two frequencies at the same frequencies. It enables embedding the DRAG pulse shaping in an architecture of memory-free real-time direct digital synthesis (DDSs). This work also investigates the effect of inter-channel interference (ICI) and introduces a technique to suppress it by flowing compensating current to the on-chip ground. The implemented chip in 40-nm bulk CMOS supports the DRAG pulses for sine and raised-cosine shaping and suppresses the ICI by 10 dB, showing an SFDR of >40 dBc in the presence of ICI. The total power consumption when generating a rectangular pulse without DRAG is 4.2 mW, and it increases to 6.5 mW when generating sine-shaped pulse with DRAG.

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Publication Details

Journal
IEEE Journal of Solid-State Circuits
Published
2024-12-10
DOI
https://doi.org/10.1109/jssc.2024.3510032
Citations
1
Primary Topic
Quantum and electron transport phenomena
Type
article
Field-Weighted Citation Impact
0.34
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article

A Quantum Controller IC With DRAG Generation in 40-nm Cryo-CMOS for Scalable Superconducting Quantum Computing

Donggyu Minn, Seongchan Bae, Kiseo Kang, Jaeho Lee et al.
1 citations
IEEE Journal of Solid-State Circuits
Quantum and electron transport phenomena
0.34
article

A Quantum Controller IC With DRAG Generation in 40-nm Cryo-CMOS for Scalable Superconducting Quantum Computing

Donggyu Minn, Seongchan Bae, Kiseo Kang, Jaeho Lee, Jae-Yoon Sim
article en
1 citations

Abstract

This article presents a cryo-CMOS controller that supports derivative removal by adiabatic gate (DRAG) pulses without requiring internal memory. The proposed scheme uses trigonometric relations that substitute a product of two sinusoids by a sum of two frequencies at the same frequencies. It enables embedding the DRAG pulse shaping in an architecture of memory-free real-time direct digital synthesis (DDSs). This work also investigates the effect of inter-channel interference (ICI) and introduces a technique to suppress it by flowing compensating current to the on-chip ground. The implemented chip in 40-nm bulk CMOS supports the DRAG pulses for sine and raised-cosine shaping and suppresses the ICI by 10 dB, showing an SFDR of >40 dBc in the presence of ICI. The total power consumption when generating a rectangular pulse without DRAG is 4.2 mW, and it increases to 6.5 mW when generating sine-shaped pulse with DRAG.

IEEE Journal of Solid-State CircuitsVol. 60(8)
Pohang University of Science and Technology (KR)
Affordable and clean energy
Openalex Percentile: Top 38%
Quantum and electron transport phenomena
0.34
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A Quantum Controller IC With DRAG Generation in 40-nm Cryo-CMOS for Scalable Superconducting Quantum Computing — Donggyu Minn, Seongchan Bae, et al. · IEEE Journal of Solid-State Circuits (2024) | TGRS Research Map | TGRS