THE PHASE DIAGRAM OF THE In2Se3-SrInSe2 SYSTEM AND THE PHOTO- AND ELECTROPHYSICAL PROPERTIES OF THE OBTAINED PHASES

Using the methods of physico-chemical analysis: differential-thermal analysis (DTA), X-ray diffraction (XRD), microstructural analysis (MSA), as well as density and microhardness measurements, the chemical interaction in the In2Se3-SrInSe2 system was studied and its phase T-x diagram was constructed. The phase diagram of the system is quasi-binary and eutectic. The composition of the eutectic formed between the compounds In2Se3 and SrInSe2 is 35 mol % SrInSe2, with a melting point of 720°C. According to the results of the microstructural analysis in a system based on the In2Se3 compound, the solid solution region reaches up to 7 mol % SrInSe2 and based on SrInSe2, the solubility is 10 mol % In2Se3. The temperature dependences of electrical conductivity and thermoelectric driving force, as well as the spectral dependence of photoconductivity of solid solution alloys (In2Se3)1-x(SrInSe2)x (x=0.01; 0.03; 0.05), have been studied.

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Publication Details

Journal
New Materials Compounds and Applications
Published
2024-12-10
DOI
https://doi.org/10.62476/nmca83402
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
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article

THE PHASE DIAGRAM OF THE In2Se3-SrInSe2 SYSTEM AND THE PHOTO- AND ELECTROPHYSICAL PROPERTIES OF THE OBTAINED PHASES

N.I. Yagubov
New Materials Compounds and Applications
Chalcogenide Semiconductor Thin Films
article

THE PHASE DIAGRAM OF THE In2Se3-SrInSe2 SYSTEM AND THE PHOTO- AND ELECTROPHYSICAL PROPERTIES OF THE OBTAINED PHASES

N.I. Yagubov
article en

Abstract

Using the methods of physico-chemical analysis: differential-thermal analysis (DTA), X-ray diffraction (XRD), microstructural analysis (MSA), as well as density and microhardness measurements, the chemical interaction in the In2Se3-SrInSe2 system was studied and its phase T-x diagram was constructed. The phase diagram of the system is quasi-binary and eutectic. The composition of the eutectic formed between the compounds In2Se3 and SrInSe2 is 35 mol % SrInSe2, with a melting point of 720°C. According to the results of the microstructural analysis in a system based on the In2Se3 compound, the solid solution region reaches up to 7 mol % SrInSe2 and based on SrInSe2, the solubility is 10 mol % In2Se3. The temperature dependences of electrical conductivity and thermoelectric driving force, as well as the spectral dependence of photoconductivity of solid solution alloys (In2Se3)1-x(SrInSe2)x (x=0.01; 0.03; 0.05), have been studied.

New Materials Compounds and ApplicationsVol. 8(3)
Baku State University (AZ)
Openalex Percentile: Top 80%
Chalcogenide Semiconductor Thin Films
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