Combining Germanium Quantum Dots with Porous Silicon: An Innovative Method for X-ray Detection
This study investigates the controlled electrochemical synthesis of porous silicon and germanium (Ge)-doped porous silicon using a 4:1 ratio of hydrofluoric acid (HF) to ethanol. Structural analysis performed with FESEM-EDX confirmed the presence of Ge in the samples. Analysis of the I-V characteristics demonstrated that increasing the bias voltage at the source led to a corresponding increase in the observed current. Additionally, effective X-ray measurements facilitated the assessment of X-ray irradiation effects on the sample detector. The experimental results indicated that the optimal conditions for the porous silicon (PS) and Ge-doped porous silicon (Ge-PS) samples were (90V, 100mA, 1s) and (100V, 10mA, 0.5s), respectively.
Authors
- Ahmad M. AL-Diabat (ORCID: https://orcid.org/0000-0002-9292-1741)
- Natheer A. Algadri (ORCID: https://orcid.org/0000-0001-8829-707X)
- Tariq AlZoubi (ORCID: https://orcid.org/0000-0002-6740-6975)
- Abdulsalam Abuelsamen (ORCID: https://orcid.org/0000-0001-7881-1784)
- Amal Mohamed Ahmed Ali (ORCID: https://orcid.org/0000-0002-0917-7991)
- Osama Abu Noqta (ORCID: https://orcid.org/0000-0001-9015-7121)
- Ghaseb N. Makhadmeh
- Naser M. Ahmed
- Almutery Aml
Institutions
- Universiti Sains Malaysia (MY)
- Prince Sattam Bin Abdulaziz University (SA)
- Al-Zaytoonah University of Jordan (JO)
- Shaqra University (SA)
- Skyline University College (AE)
- American University of the Middle East (KW)
- Middle East University (JO)
- Isra University (JO)
Publication Details
- Journal
- WSEAS TRANSACTIONS ON ELECTRONICS
- Published
- 2024-12-10
- DOI
- https://doi.org/10.37394/232017.2024.15.15
- Primary Topic
- Advanced Semiconductor Detectors and Materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- University of Jordan