An ultra-wideband current-reused LNA MMIC with negative feedback and adaptive bias networks

Abstract An ultra-wideband current-reused low-noise amplifier (LNA) monolithic microwave integrated circuit design is presented in this letter. Negative feedback networks are employed at both stages of the proposed LNA to expand bandwidth. Furthermore, source adaptive bias networks is designed in the first stage and combined with a current-reused construction to acquire a compact chip size and maintain low power consumption. Then, the validation of design theory is implemented by employing a 0.15-µm gallium arsenide pseudomorphic high-electron-mobility transistor process. The measured results show that the proposed LNA achieves a small signal gain of 15.5–17.8 dB, a noise figure of 3–3.65 dB, and an output 1 dB compression point (OP 1 dB ) of 14.5–15.5 dBm from the target bandwidth of 2–18 GHz. In addition, the fabricated LNA consumes 220 mW from a 5 V supply and occupies a chip area of 1.2 × 1.5 mm 2 .

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Publication Details

Journal
International Journal of Microwave and Wireless Technologies
Published
2024-11-01
DOI
https://doi.org/10.1017/s1759078724001235
Citations
2
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
Field-Weighted Citation Impact
0.42

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article

An ultra-wideband current-reused LNA MMIC with negative feedback and adaptive bias networks

Chao Le, Zhiqun Cheng, Tingwei Gong, Xuefei Xuan et al.
2 citations
International Journal of Microwave and Wireless Technologies
Radio Frequency Integrated Circuit Design
0.42
article

An ultra-wideband current-reused LNA MMIC with negative feedback and adaptive bias networks

Chao Le, Zhiqun Cheng, Tingwei Gong, Xuefei Xuan, Zhiwei Zhang
article en
2 citations

Abstract

Abstract An ultra-wideband current-reused low-noise amplifier (LNA) monolithic microwave integrated circuit design is presented in this letter. Negative feedback networks are employed at both stages of the proposed LNA to expand bandwidth. Furthermore, source adaptive bias networks is designed in the first stage and combined with a current-reused construction to acquire a compact chip size and maintain low power consumption. Then, the validation of design theory is implemented by employing a 0.15-µm gallium arsenide pseudomorphic high-electron-mobility transistor process. The measured results show that the proposed LNA achieves a small signal gain of 15.5–17.8 dB, a noise figure of 3–3.65 dB, and an output 1 dB compression point (OP 1 dB ) of 14.5–15.5 dBm from the target bandwidth of 2–18 GHz. In addition, the fabricated LNA consumes 220 mW from a 5 V supply and occupies a chip area of 1.2 × 1.5 mm 2 .

International Journal of Microwave and Wireless TechnologiesVol. 16(9)
Xinjiang Institute of Engineering (CN), Huainan Normal University (CN), Hangzhou Dianzi University (CN)
Natural Science Foundation of Anhui Province
Affordable and clean energy
Openalex Percentile: Top 36%
Radio Frequency Integrated Circuit Design
0.42
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An ultra-wideband current-reused LNA MMIC with negative feedback and adaptive bias networks — Chao Le, Zhiqun Cheng, et al. · International Journal of Microwave and Wireless Technologies (2024) | TGRS Research Map | TGRS