31W Linear broadband 3.4 to 4.4 GHZ high power class-j GaN HEMT amplifier

The recent upsurge in wireless communication systems requiring high-power transmitters for numerous applications such as electronic warfare (EW), RADAR, Satellite and optical communications has further underscored the importance of linear broadband high-power Class-J power amplifiers. This paper proposes a 31W linear broadband 3.4 to 4.4 GHz high-power Class-J GaN HEMT(gallium nitride high electron mobility transistor)amplifier. The power amplifier was designed based on Cree's commercially available 10WGaN HEMT power transistor device (CGHV40010F) using Keysight Advanced Design System (ADS) software and simulated. The transistor was biased withadrain supply voltage of 48V at aquiescent drain-to-source current of 0.58A,which makes the power transistor suitable for high voltage transmitter operations and foreclosed the need for voltage upgrade, thereby reducing thecost of operation. The power amplifier (PA) operates from 3.4 to 4.4 GHz with a centre frequency of 3.9 GHz. The PA has an output power of 31W, drain efficiency of 36.3%, power added efficiency of 35.3% and power gain of 12.9 dB at an input power of 32 dBm. The PA small signal gain stood at 10.6 dB at acentre frequency of 3.9 GHz. The PA maintained a peak envelope power of 56.2W at aninput power of 31 dBm at atwo-tone Frequency of 3.895 GHz. The proposed PA will find applications in wireless communications, military and aviation transmitters.