BaS <sub>3</sub> :Sb <sub>2</sub> S <sub>3</sub> :GdS <sub>2</sub> Longitudinal Rods: Single‐Source Precursor Synthesis, Characterization, and Electrochemical Applications for Supercapacitance and Catalysis

Abstract This study investigates a unique and energy‐efficient BaS3:Sb2S3:GdS 2 nanocomposite chalcogenide system that was made using a single source dithiocarbamate precursor route. The produced dithiocarbamate metallic sulfide has an average crystallite size of 17.38 nm and a small band gap of 3.76 eV. An examination of functional groups revealed the existence of several linkages, including the metal sulfide bond. Morphologically, BaS 3 :Sb 2 S 3 :GdS 2 appeared as elongated rods showing greater surface area for electrochemical activity. By constructing a nickel foam electrode and covering it with a slurry of BaS 3 :Sb 2 S 3 :GdS 2 , the electrochemical charge‐storing behavior of BaS 3 :Sb 2 S 3 :GdS 2 was assessed. Prepared electrode exhibited auspicious electrical charge storage capacities with a specific capacitance reaching upto 633.32 F g −1 . These findings suggest that there is a significant amount of potential for energy storage in the electrode. This electrode also exhibited a reduced series resistance of ( R s ) = 0.31 Ω according to the impedance experiments, and a specific power density of 9109.16 W kg −1 . In terms of electrocatalysis, the electrode produced oxygen production overpotential and corresponding Tafel slope of 334 mV and 366 mV dec −1 , whereas the hydrogen production overpotential and Tafel slope were 229 mV and 175 mV dec −1 , correspondingly.

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Journal
ChemistrySelect
Published
2024-12-01
DOI
https://doi.org/10.1002/slct.202403344
Citations
2
Primary Topic
Chalcogenide Semiconductor Thin Films
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article
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0.42
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article

BaS 3 :Sb 2 S 3 :GdS 2 Longitudinal Rods: Single‐Source Precursor Synthesis, Characterization, and Electrochemical Applications for Supercapacitance and Catalysis

Jehad S. Al‐Hawadi, Aboud Ahmed Awadh Bahajjaj, Ghulam Abbas Ashraf, Khuram Shahzad Ahmad et al.
2 citations
ChemistrySelect
Chalcogenide Semiconductor Thin Films
0.42
article

BaS 3 :Sb 2 S 3 :GdS 2 Longitudinal Rods: Single‐Source Precursor Synthesis, Characterization, and Electrochemical Applications for Supercapacitance and Catalysis

Jehad S. Al‐Hawadi, Aboud Ahmed Awadh Bahajjaj, Ghulam Abbas Ashraf, Khuram Shahzad Ahmad, Shaan Bibi Jaffri, Ram Krishna Gupta, Bhumikaben Makawana
article en
2 citations

Abstract

Abstract This study investigates a unique and energy‐efficient BaS3:Sb2S3:GdS 2 nanocomposite chalcogenide system that was made using a single source dithiocarbamate precursor route. The produced dithiocarbamate metallic sulfide has an average crystallite size of 17.38 nm and a small band gap of 3.76 eV. An examination of functional groups revealed the existence of several linkages, including the metal sulfide bond. Morphologically, BaS 3 :Sb 2 S 3 :GdS 2 appeared as elongated rods showing greater surface area for electrochemical activity. By constructing a nickel foam electrode and covering it with a slurry of BaS 3 :Sb 2 S 3 :GdS 2 , the electrochemical charge‐storing behavior of BaS 3 :Sb 2 S 3 :GdS 2 was assessed. Prepared electrode exhibited auspicious electrical charge storage capacities with a specific capacitance reaching upto 633.32 F g −1 . These findings suggest that there is a significant amount of potential for energy storage in the electrode. This electrode also exhibited a reduced series resistance of ( R s ) = 0.31 Ω according to the impedance experiments, and a specific power density of 9109.16 W kg −1 . In terms of electrocatalysis, the electrode produced oxygen production overpotential and corresponding Tafel slope of 334 mV and 366 mV dec −1 , whereas the hydrogen production overpotential and Tafel slope were 229 mV and 175 mV dec −1 , correspondingly.

ChemistrySelectVol. 9(46)
Zarqa University (JO), King Saud University (SA), New Uzbekistan University (UZ), National University of Uzbekistan (UZ), Pittsburg State University (US), Fatima Jinnah Women University (PK)
Affordable and clean energy
Openalex Percentile: Top 36%
Chalcogenide Semiconductor Thin Films
0.42
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