Effect of δ-Potential on Electron-Momentum Filter Based on Hybrid δ-Magnetic-Barrier and Rectangular-Electric-Barrier Nanostructure

A hybrid magnetic-electric-barrier nanostructure consisting of a [Formula: see text]-magnetic-barrier and a rectangular-electric-barrier can be constructed by patterning a half-infinitely wide ferromagnetic stripe and a Schottky-metal stripe on the surface of GaAs/Al x Ga[Formula: see text]As. This hybrid nanostructure was recently demonstrated to act as an electron-momentum filter. Here, we introduce a tunable [Formula: see text]-potential by the atomic-layer doping to manipulate this momentum filter. The wave-vector filtering is found to be associated with this [Formula: see text]-doping, since the effective potential experienced by electrons in the device depends on the [Formula: see text]-potential. It also is found that the wave-vector filtering efficiency can be effectively controlled by changing the weight or position of the [Formula: see text]-doping. These interesting findings may be useful for designing structurally manipulable electron-momentum filters for nanoelectronics device applications.