Frequency Tunable Film Bulk Acoustic Resonator Integrating PMN‐PT/FSMA Multiferroic Heterostructure for Flexible MEMS

Abstract Frequency tunable flexible piezo resonators exhibit significant potential for technological advances in wearable magnetic field sensing, futuristic wireless telecommunication devices, and flexible micro‐electromechanical systems. This study presents a multifunctional and flexible 0.67Pb(Mg 1/3 Nb 2/3 )O 3 −0.33PbTiO 3 (PMN‐PT)/Ni 50 Mn 35 In 15 (Ni‐Mn‐In) multiferroic heterostructure‐based bulk acoustic wave (BAW) resonator fabricated over Kapton substrate. The fundamental resonance frequency ( f R = 5.31 GHz) of the resonator is tunable with magnetic and electric fields. A significant change in resonance frequency (Δ f R ) of 405 MHz has been achieved with 3.37 Hz nT −1 sensitivity using a direct current (DC) magnetic field of 1200 Oe, attributed to the delta‐E effect. The resonator displays a significant magnetic field tunability of 8.83%. Additionally, a substantial Δ f R of 360 MHz, 36 Hz µV −1 sensitivity and 6.78% tunability is attained with 10 V of DC bias voltage. The impact of magnetic field and DC bias voltage on the acoustic characteristics have been studied by fitting the resonance frequency curves with an equivalent modified Butterworth‐Van Dyke model. The fabricated BAW resonator exhibits outstanding flexibility with no discernible change in f R up to 2000 bending cycles. Such PMN‐PT/Ni‐Mn‐In‐based multiferroic BAW resonators displaying magnetic and electric field tunability are propitious for next‐generation flexible electronics and magnetic field sensors.