Protocol for depositing transparent conductive Ta-doped SnO2 film by hollow cathode gas flow sputtering technology
Transparent conductive Ta-doped SnO<sub>2</sub> (SnO<sub>2</sub>: Ta) thin film with low surface roughness, low resistivity, and high carrier concentration is one potential alternative of commercial transparent conductive oxides (TCOs). Here, we present a protocol for fabricating tin oxide films by hollow cathode gas flow sputtering technology. We describe steps for preparing and cleaning substrate, and film deposition process on the fresh uncorroded float glass substrate. We then detail procedures for measuring the optical and electrical properties of the film. For complete details on the use and execution of this protocol, please refer to Huo et al.<sup>1</sup>.
Authors
- Peng Gao (ORCID: https://orcid.org/0000-0002-4963-2282)
- Bernd Szyszka (ORCID: https://orcid.org/0000-0001-8070-4304)
- Manuel Hartig (ORCID: https://orcid.org/0009-0003-6886-1798)
- Bertwin Bilgrim Otto Seibertz (ORCID: https://orcid.org/0000-0001-7816-2884)
- Fangfang Huo
- Nivin Alktash (ORCID: https://orcid.org/0009-0003-8945-2977)
- Can Wang (ORCID: https://orcid.org/0000-0002-5119-4285)
- Ruslan Muydninov
Institutions
- Helmholtz-Zentrum Berlin für Materialien und Energie (DE)
- Fujian Institute of Research on the Structure of Matter (CN)
- Technische Universität Berlin (DE)
Publication Details
- Journal
- STAR Protocols
- Published
- 2024-12-01
- DOI
- https://doi.org/10.1016/j.xpro.2024.103489
- Primary Topic
- ZnO doping and properties
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Deutsche Forschungsgemeinschaft
- Helmholtz-Zentrum Berlin für Materialien und Energie