Switchable Photovoltaic Effect Induced by Light Intensity

Photovoltaic devices capable of reversible photovoltaic polarity through external signal modulation may enable multifunctional optoelectronic systems. However, such devices are limited to those induced by gate voltage, electrical poling, or optical wavelength by using complicated device architectures. Here, we show that the photovoltaic polarity is also switchable with the intensity of incident light. The modulation in light intensity induces photovoltaic polarity switching in geometrically asymmetric MoS<sub>2</sub> Schottky photodiodes, explained by the asymmetric lowering of the Schottky barrier heights due to the trapping of photogenerated holes at the MoS<sub>2</sub>/Cr interface states. An applied gate voltage can further modulate the carrier concentration in the MoS<sub>2</sub> channel, providing a method to tune the threshold light intensity of polarity switching. Finally, a bidirectional optoelectronic logic gate with "AND" and "OR" functions was demonstrated within a single device.

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Institutions

Publication Details

Journal
ACS Nano
Published
2024-12-07
DOI
https://doi.org/10.1021/acsnano.4c10392
Citations
17
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
1.99

Funders

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article

Switchable Photovoltaic Effect Induced by Light Intensity

Hamidreza Ghanbari, Ribwar Ahmadi, Michael M. Adachi, Deji Akinwande et al.
17 citations
ACS Nano
2D Materials and Applications
1.99
article

Switchable Photovoltaic Effect Induced by Light Intensity

Hamidreza Ghanbari, Ribwar Ahmadi, Michael M. Adachi, Deji Akinwande, Amin Abnavi
article en
17 citations

Abstract

Photovoltaic devices capable of reversible photovoltaic polarity through external signal modulation may enable multifunctional optoelectronic systems. However, such devices are limited to those induced by gate voltage, electrical poling, or optical wavelength by using complicated device architectures. Here, we show that the photovoltaic polarity is also switchable with the intensity of incident light. The modulation in light intensity induces photovoltaic polarity switching in geometrically asymmetric MoS<sub>2</sub> Schottky photodiodes, explained by the asymmetric lowering of the Schottky barrier heights due to the trapping of photogenerated holes at the MoS<sub>2</sub>/Cr interface states. An applied gate voltage can further modulate the carrier concentration in the MoS<sub>2</sub> channel, providing a method to tune the threshold light intensity of polarity switching. Finally, a bidirectional optoelectronic logic gate with "AND" and "OR" functions was demonstrated within a single device.

ACS NanoVol. 18(50)
Simon Fraser University (CA), The University of Texas at Austin (US)
Canada Foundation for Innovation, Simon Fraser University, Natural Sciences and Engineering Research Council of Canada, Western Economic Diversification Canada, British Columbia Knowledge Development Fund
Affordable and clean energy
Openalex Percentile: Top 9%
2D Materials and Applications
1.99
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