Innovative Ultralow Thermal Budget ZrHfOx Ferroelectric Films with Low-Temperature Phase Transition for Next-Generation High-Speed Multifunctional Devices
By design of the element concentration, regulating the ratio of the t phase and the energy difference between t and o phases, the ZrHfOx (ZHO) film demonstrated the highest polarization value at a maximum processing temperature of only 280 °C without an annealing process, and it can withstand over 10<sup>10</sup> polarization cycles without breakdown. The ZHO film maintains good ferroelectric performance in extreme temperature environments (4.55 to 473 K). Even under high-temperature conditions, the ZHO film shows exceptional endurance performance (>10<sup>10</sup> at 423 K). These parameters represent the best overall performance reported in the literature to date. The polarization switching process can be accurately described by the nucleation limited switching (NLS) model, and the polarization switching time is expected to reach the sub-ns level as the device size decreases. The ZHO film demonstrates great potential in both process simplification and performance optimization, providing new possibilities for the application of ferroelectric devices.
Authors
- Jiajie Yu
- Hao Zhu (ORCID: https://orcid.org/0000-0003-3890-6871)
- Zhenhai Li (ORCID: https://orcid.org/0000-0001-9878-3274)
- David Wei Zhang
- Tianyu Wang (ORCID: https://orcid.org/0000-0001-8114-3481)
- Qingqing Sun (ORCID: https://orcid.org/0000-0002-6533-1834)
- Lin Chen (ORCID: https://orcid.org/0000-0002-7145-7564)
- Jialin Meng (ORCID: https://orcid.org/0000-0002-2166-3220)
- Yongkai Liu (ORCID: https://orcid.org/0000-0002-3704-4897)
- Kangli Xu (ORCID: https://orcid.org/0000-0002-8077-3593)
- Yifan Song (ORCID: https://orcid.org/0009-0001-8646-3916)
- Ruihong Yuan (ORCID: https://orcid.org/0009-0003-7846-6951)
Institutions
- Shandong University (CN)
- Fudan University (CN)
- Shanghai Innovative Research Center of Traditional Chinese Medicine (CN)
- Jiaxing University (CN)
- Shanghai Fudan Microelectronics (China) (CN)
- State Key Laboratory of Crystal Materials
Publication Details
- Journal
- Nano Letters
- Published
- 2024-12-07
- DOI
- https://doi.org/10.1021/acs.nanolett.4c04654
- Citations
- 4
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.83
Funders
- National Natural Science Foundation of China
- China Postdoctoral Science Foundation
- Science and Technology Commission of Shanghai Municipality
- Natural Science Foundation of Shandong Province
- Taishan Scholar Foundation of Shandong Province
- National Key Research and Development Program of China