Effect of GaInP and GaAsP inserted into waveguide/barrier interface on carrier leakage in InAlGaAs quantum well 808-nm laser diode

Authors

Publication Details

Journal
Chinese Optics
Published
2024-12-06
DOI
https://doi.org/10.37188/co.en-2024-0006
Citations
1
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
Field-Weighted Citation Impact
0.21
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article

Effect of GaInP and GaAsP inserted into waveguide/barrier interface on carrier leakage in InAlGaAs quantum well 808-nm laser diode

Hailiang Dong, Wei Jia, Zhigang Jia, Liang Jian et al.
1 citations
Chinese Optics
Semiconductor Lasers and Optical Devices
0.21
article

Effect of GaInP and GaAsP inserted into waveguide/barrier interface on carrier leakage in InAlGaAs quantum well 808-nm laser diode

Hailiang Dong, Wei Jia, Zhigang Jia, Liang Jian, Bingshe Xu, FU Meng-jie
article en
1 citations

Abstract

No abstract available for this paper.
Chinese OpticsVol. 18(1)
Affordable and clean energy
Openalex Percentile: Top 45%
Semiconductor Lasers and Optical Devices
0.21
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Effect of GaInP and GaAsP inserted into waveguide/barrier interface on carrier leakage in InAlGaAs quantum well 808-nm laser diode — Hailiang Dong, Wei Jia, et al. · Chinese Optics (2024) | TGRS Research Map | TGRS