Mechanism Analysis of Bubble Discharge Within Silicone Gels Under Pulsed Electric Field

Silicone gel, used in the packaging of high-voltage, high-power semiconductor devices, generates bubbles during the packaging process, which accelerates the degradation of its insulation properties. This paper establishes a testing platform for electrical treeing in silicone gel under pulsed electric fields, investigating the effect of pulse voltage amplitude on bubble development and studying the initiation and growth of electrical treeing in a silicone gel with different pulse edge times. The relationship between bubbles and electrical treeing in silicone gel materials is discussed. A two-dimensional plasma simulation model for bubble discharge in silicone gel under pulsed electric fields is developed, analyzing the internal electric field distortion caused by the response times of different ions and electrons. Additionally, the discharge current and its effects on silicone gel under pulsed electric fields are examined. By studying the influence of different pulse edge times, repetition frequencies, and temperatures on discharge current magnitude and ozone generation rates, the impact of electrical breakdown and chemical corrosion on the degradation of organic silicone gel under various operating conditions is analyzed. This study explores the macroscopic and microscopic mechanisms of dielectric performance degradation in organic silicone gel under pulsed electric fields, providing a basis for research on high-performance packaging materials and the development of high-voltage, high-power semiconductor devices.

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Publication Details

Journal
Gels
Published
2024-12-06
DOI
https://doi.org/10.3390/gels10120799
Citations
4
Primary Topic
High voltage insulation and dielectric phenomena
Type
article
Field-Weighted Citation Impact
0.47

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article

Mechanism Analysis of Bubble Discharge Within Silicone Gels Under Pulsed Electric Field

Yuantao Zhang, Dongxin He, Guangzhu Wang, G. Teyssèdre et al.
4 citations
Gels
High voltage insulation and dielectric phenomena
0.47
article

Mechanism Analysis of Bubble Discharge Within Silicone Gels Under Pulsed Electric Field

Yuantao Zhang, Dongxin He, Guangzhu Wang, G. Teyssèdre, Keming Liu, Zhe Xu, Haochen Wang, Zhe Zhang
article en
4 citations

Abstract

Silicone gel, used in the packaging of high-voltage, high-power semiconductor devices, generates bubbles during the packaging process, which accelerates the degradation of its insulation properties. This paper establishes a testing platform for electrical treeing in silicone gel under pulsed electric fields, investigating the effect of pulse voltage amplitude on bubble development and studying the initiation and growth of electrical treeing in a silicone gel with different pulse edge times. The relationship between bubbles and electrical treeing in silicone gel materials is discussed. A two-dimensional plasma simulation model for bubble discharge in silicone gel under pulsed electric fields is developed, analyzing the internal electric field distortion caused by the response times of different ions and electrons. Additionally, the discharge current and its effects on silicone gel under pulsed electric fields are examined. By studying the influence of different pulse edge times, repetition frequencies, and temperatures on discharge current magnitude and ozone generation rates, the impact of electrical breakdown and chemical corrosion on the degradation of organic silicone gel under various operating conditions is analyzed. This study explores the macroscopic and microscopic mechanisms of dielectric performance degradation in organic silicone gel under pulsed electric fields, providing a basis for research on high-performance packaging materials and the development of high-voltage, high-power semiconductor devices.

GelsVol. 10(12)
Shandong University (CN), NARI Group (China) (CN), Laboratoire Plasma et Conversion d'Energie (FR)
National Natural Science Foundation of China
Affordable and clean energy
Openalex Percentile: Top 37%
High voltage insulation and dielectric phenomena
0.47
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